μ-401A-RO Lab Thermal & Organic Evaporation Deposition Platform

共溅射式磁控溅射系统,支持2-6只靶枪,2-6寸样品,适合微米以下厚度的薄膜制备,金属薄膜,半导体薄膜,氧化物薄膜,合金薄膜,多组分薄膜均可制备。


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The Nichwell Solutions advantage.

 

When you select Nichwell Solutions as your technology provider, you'll be placing your IT infrastructure in the hands of experienced, trained professionals. We take a different approach and the results are clear. People love our team and the services we provide.

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We lower your support costs by correctly diagnosing and fixing issues the first time and by providing effective preventive maintenance to help you avoid expensive downtime and repairs. Our 100% Nicehwell-based team consists of experienced, seasoned professionals certified by Microsoft, Citrix, Dell, VMWare, Veeam and CompTIA. We are your IT department.

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Our sales team is not influenced by commissions, manufacturer incentives or quotas because that's not how we do business. We explore your operations, carefully evaluate your security, establish your monitoring and technology needs, then provide a tailored proposal. Because our only interest is a satisfied long term client, you can be sure we're on your side and our solutions will always revolve around you.

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Every service is owned, managed and backed by our in-house professionals.

When you purchase a re-sold service and then that service has a problem, response and resolution times can suffer. That's why we host our own servers in carrier-class, US-based data centers and we don't resell 3rd party hosted services to our clients. We're control freaks. Say goodbye to delays, excuses, finger pointing and blame-games. If we offer it, we support it. It's as simple as that.

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The key to our client service is our seamless integration of deep industry and functional expertise with tools and capabilities to support execution and make change happen—on a global scale.

μ-401A-RO Lab Thermal & Organic Evaporation Deposition Platform

磁控溅射是物理气相沉积技术(Physical Vapor Deposition, PVD)的一种。一般用于制备金属、半导体、绝缘体等薄膜材料,具有设备简单、易于控制、效率高,面积大等优点。

磁控溅射原理:通过在靶阴极表面引入磁场,利用磁场对带电粒子的约束来提高等离子体密度以增加溅射率。


技术参数:

1 本底真空:10-7Torr到10-9Torr;

2 单基片设计,尺寸可定制,常规尺寸2-6英寸;

3 基片可旋转并加热:300℃/500℃/800℃;

4 最多可拓展8支磁控溅射靶枪,可共溅射;

5 靶枪角度可调,溅镀距离可调,可升级强磁靶;

6 可选配多路气路;

7 防交叉污染隔板设计;

8 可配备离子束辅助沉积;

9 可配备样品预清洗功能;

10 可配备快速进样室;

11 可配备自动压力控制系统;

12 全自动操作系统;